CharacteristicSpecificationAbility128 GBInterfacePCIe Gen3x4 (NVMe 1.3)Form factorM.2 2280Sequential ReadingUp to 1800 MB/sSequential WritingUp to 600 MB/sRandom Reading (IOPS)Up to 100,000 IOPSRandom Writing (IOPS)Up to 130,000 IOPSControllerRealtek RTS5763DLNAND type3D TLC (usually 64 layers)Performance and Reliability FeaturesCaching technologies : This model does not have a dedicated DRAM cache. Instead, it uses the Host Memory Buffer (HMB) and SLC Caching to maintain smooth transfer behavior : The pseudo-SLC cache is approximately 25 GB . Once this cache is full, the write speed drops to approximately 59 MB/s .Durability (Endurance) : The 128GB model is rated at 60 TBW (Total Bytes Written). Some reports indicate up to 80 TBW depending on the regional variant.Reliability (MTBF) : The mean time between failures is estimated at 1.8 million hours .Error correction : Incorporates LDPC ECC (Low Density Error Correction Code) technology to ensure data integrity