SAMSUNG 990 PRO 2TB NVME GEN4 7450MB/S WITH DRAM CACHE

Solid-State-Drive Capacity: 2 TB (2000 GB) Variants: 1 TB 2 TB Hardware Versions: Pascal + V7 1 TB 2 TB Pascal + V8 1Tb 2 TB 4 TB Pascal + V8 512Gb 1 TB 2 TB Pascal + V9 1Tb TLC 2 TB 4 TB Overprovisioning: 92.7 GB / 10.0 % Production: Active Released: Aug 24th, 2022 Price at Launch: 179 USD Part Number: MZ-V9P1T0CW | MZ-V9P1T0BW Market: Consumer Physical Form Factor: M.2 2280 (Single-Sided) Interface: PCIe 4.0 x4 Protocol: NVMe 2.0 Controller Manufacturer: Samsung Name: Pascal (S4LV008) Find More Drives Architecture: ARM 32-bit Cortex-R8 Foundry: Samsung FinFET Process: 8 nm Flash Channels: 8 @ 2,000 MT/s Chip Enables: 8 Controller Features: DRAM (enabled) NAND Flash Manufacturer: Samsung Name: V-NAND V7 Part Number: K90UGY8J5D-CCK0 Type: TLC Technology: 176-layer Speed: 2000 MT/s Capacity: 2 chips @ 4 Tbit Toggle: 5.0 Topology: Charge Trap Die Size: 60 mm² (8.5 Gbit/mm²) Dies per Chip: 8 dies @ 512 Gbit Planes per Die: 4 Decks per Die: 2 Word Lines: 191 per NAND String 92.1% Vertical Efficiency Read Time (tR): 40 µs Program Time (tProg): 347 µs Block Erase Time (tBERS): 3.5 ms Die Read Speed: 1600 MB/s Die Write Speed: 184 MB/s Page Size: 16 KB DRAM Cache Type: LPDDR4-1866 Name: SAMSUNG K4F8E164HM-BGCJ Capacity: 1024 MB (1x 1024 MB) Organization: 8Gx16 Performance Sequential Read: 7,450 MB/s Sequential Write: 6,900 MB/s Random Read: 1,200,000 IOPS Random Write: 1,550,000 IOPS Endurance: 600 TBW Warranty: 5 Years MTBF: 1.5 Million Hours Drive Writes Per Day (DWPD): 0.3 SLC Write Cache: approx. 114 GB (108 GB Dynamic + 6 GB Static) Features TRIM: Yes SMART: Yes Power Loss Protection: No Encryption: AES-256 TCG Opal RGB Lighting: No PS5 Compatible: Yes